1N6622 technical specifications american microsemiconductor, inc. 133 kings road, madison, nj 07940 tel. 973 - 377 - 9566 fax. 973 - 377 - 3078 page 1 of 1 iso9001:2008, as/en/jisq 9100 rev. c certificate no. 45325 americanmicrosemi.com | order online s p e c i f i c a t i o n s value unit military grade n --- i o m ax. output current 1.2 a v r rm repeat peak rev. v 6 00 v t r r max. rev. rec. time 3 0 n s @ i f t est condition 5 00 ma @ i r test cond ition 1.0 a v fm max. forward voltage 1 .4 v i r m max. reverse current 500 n a @ v r t est condition 6 00 v i r m max. peak rev. current 200 a @ temp . test condition 150 c semiconductor material silicon --- maximum operating temp. 175 c package style axial - 4 --- mounting style t --- a l d 1 d 2 mm 25.4 3.94 0.78 dia. 2. 16 dia. inches 1.0 min. 0.1 55 max. 0.030 0 .002 0.0 85 max. while this rectifier is co n- sumer- rated, i t is ideal for high reliability applications specifically in designs with high temperature tolerance re- quirements. the 1N6622 fea- tures very low switching loss at high temperatures, is met- allurgically bonded, and is encased in a non- cavity (void- less) glass package. diodes > high - speed/fast recovery f e a t u r e s ? hermetically seale d voi d less - glass ? high r eliability ? excellent o perating t emp r ange ? triple- layer pas sivation ? high voltage with ul tra- fast re covery time
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